dual igbt hvigbt module 200 amperes/4500 volts 1 QID4520002 preliminary outline drawing and circuit diagram dimensions inches millimeters a 5.51 140.0 b 2.87 73.0 c 1.89 48.0 d 4.880.01 124.00.25 e 2.240.01 57.00.25 f 1.18 30.0 g 0.43 11.0 h 1.07 27.15 j 0.20 5.0 k 1.65 42.0 description: powerex hvigbts feature highly insulating housings that offer enhanced protection by means of greater creepage and strike clear - ance distance for many demanding applications like medium voltage drives and auxiliary traction applications. features: ? -40 t o 150c extended t emperature range ? 1 00% dynamic tested ? 1 00% partial discharge tested ? a dvanced mitsubishi r-series chip t echnology ? alumin um nitride (aln) ceramic substr ate for low thermal impedance ? c omplementary line-up in expanding curr ent ranges to mitsubishi hvigbt p ower modules ? c opper baseplate ? cr eepage and clearance meet iec 60077 -1 ? r ugged swsoa and rrsoa applications: ? high voltage power supplies ? medium v oltage drives ? mot or drives ? traction dimensions inches millimeters l 0.690.01 17.50.25 m 0.38 9.75 n 0.20 5.0 p 0.22 5.5 q 1.44 36.5 r 0.16 4.0 s m6 metric m6 t 0.63 min. 16.0 min. u 0.11 x 0.02 2.8 x 0.5 v 0.28 dia. 7.0 dia. 3 2 1 8 7 6 n j (2typ) s nuts (3typ) h h v (4typ) m g (3typ) r (deep) eb k (3typ) l (2typ) p u (5typ) t (screwing depth) q 5 4 1 2 3 4 5 6 7 8 f f d a c 11/14 rev. 3 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com information presented is based upon manufacturers testing and projected capabilities. this information is subject to change without notice. the manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
2 absolute maximum ratings, t j = 25 c unless otherwise specifed ratings symbol QID4520002 units junction temperature t j -40 t o 150 c storage temperature t stg -40 t o 125 c collector-emitter voltage (v ge = 0v, t j = -40 to +125c) v ces 4500 v olts collector-emitter voltage (v ge = 0v, t j = -50c) v ces 4400 v olts gate-emitter voltage (v ce = 0v) v ges 20 v olts collector current, dc (t c = 82c) i c 200 amper es peak collector current (pulse) i cm 400* amperes diode forward current** i f 200 amper es diode forward surge current** (pulse) i fm 400* amperes i 2 t for diode (t = 10ms) i 2 t 1 5 ka 2 sec maximum collector dissipation (t c = 25c, igbt part, t j(max) 150c) p c 2250 watts mounting torque, m6 terminal screws 44 in-lb mounting torque, m6 mounting screws 44 in-lb module weight (typical) 900 gr ams isolation voltage (charged part to baseplate, ac 60hz 1 min.) v iso 9.0 kv olts partial discharge q pd 10 pc (v1 = 4800 v rms , v2 = 3500 v rms , f = 60hz (acc. to iec 1287)) maximum short-circuit pulse width, t psc 10 s (v cc 3200v, v ge = 15v, r g(off) 60?, t j = 125c) electrical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units collector-cutoff current i ces v ce = v ces , v ge = 0v, t j = 125c 2.7 ma v ce = v ces , v ge = 0v, t j = 150c 15.0 ma gate leakage current i ges v ge = v ges , v ce = 0v C0.5 0.5 a gate-emitter threshold voltage v ge(th) i c = 20ma, v ce = 10v 5.8 6.3 6.8 volts collector-emitter saturation voltage v ce(sat) i c = 200a, v ge = 15v, t j = 25c 3.5 volts i c = 200a, v ge = 15v, t j = 125c 4.4 5.1 volts total gate charge q g v cc = 2800v, i c = 200a, v ge = 15v 2.25 c emitter-collector voltage** v ec i e = 200a, v ge = 0v, t j = 25c 2.5 volts i e = 200a, v ge = 0v, t j = 125c 2.8 3.4 volts * pulse width and repetition rate should be such that device junction temperature (t j ) does not exceed t j(max) rating. **represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). QID4520002 dual igbt hvigbt module 200 amperes/4500 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com preliminary 11/14 rev. 3 information presented is based upon manufacturers testing and projected capabilities. this information is subject to change without notice. the manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
3 preliminary electrical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units input capacitance c ies 29 nf output capacitance c oes v ge = 0v, v ce = 10v, f = 100khz 1 .83 nf reverse transfer capacitance c res 0.83 nf turn-on delay time t d(on) v cc = 2800v, i c = 200a, 1 .00 s rise time t r v ge = 15v, r g(on) = 16.2?, 0.30 s turn-off delay time t d(off) r g(off) = 60?, l s = 150nh, 3.6 s fall time t f inductive load 0.36 s turn-on switching energy e on t j = 125c, i c = 200a, v ge = 15v, 917 mj/p turn-off switching energy e off r g(on) = 16.2?, r g(off) = 60?, 71 6 mj/p v cc = 2800v, l s = 150nh, inductive load diode reverse recovery time** t rr v cc = 2800v, i e = 200a, 0.7 s diode reverse recovery charge** q rr v ge = 15v, r g(on) = 16.2?, 1 67* c diode reverse recovery energy e rec l s = 150nh, inductive load 258 mj/p stray inductance (c1-e2) l sce 60 nh lead resistance terminal-chip r ce 0.8 m? thermal and mechanical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units thermal resistance, junction to case*** r th(j-c) q per igbt 55 k/kw thermal resistance, junction to case*** r th(j-c) d per fwdi 1 04 k/kw contact thermal resistance, case to fin r th(c-f) per module, 18 k/kw thermal grease applied, grease = 1w/mk comparative tracking index cti 600 clearance distance in air (terminal to base) d a(t-b) 35.0 mm creepage distance along surface d s(t-b) 64 mm (terminal to base) clearance distance in air d a(t-t) 19 mm (terminal to terminal) creepage distance along surface d s(t-t) 54 mm (terminal to terminal) *pulse width and repetition rate should be such that device junction temperature rise is negligible. **represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). ***t c measurement point is just under the chips. QID4520002 dual igbt hvigbt module 200 amperes/4500 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 11/14 rev. 3 information presented is based upon manufacturers testing and projected capabilities. this information is subject to change without notice. the manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
4 emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (typical) emitter current, i e , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts ) collector-current, i c , (amperes) collector-emitter saturation voltage characteristics (typical) v ce = v ge t j = 25c t j = 150c collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) output characteristics (typical) 0 2 4 86 82.5 0 v ge = 16v 11 15 13 10 t j = 25 c 165.0 250.0 330.0 412.5 82.5 0 165.0 250.0 330.0 412.5 82.5 0 165.0 250.0 330.0 412.5 82.5 0 165.0 250.0 330.0 412.5 0 2 4 86 0 4 8 16 12 gate-emitter voltage, v ge , (volts) collector-current, i c , (amperes) transfer characteristics (typical) v ge = 15v 0 5 2 43 1 t j = 25c t j = 125c t j = 25c t j = 125c QID4520002 dual igbt hvigbt module 200 amperes/4500 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com preliminary 11/14 rev. 3 information presented is based upon manufacturers testing and projected capabilities. this information is subject to change without notice. the manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
5 preliminary collector-emitter voltage, v ce , (volts) capacitance, c ies , c oes , c res , (nf) capacitance vs. v ce (typical) 10 0 10 2 166.0 16.6 1.66 0.165 10 1 v ge = 0v t j = 25c f = 100 khz c ies c oes c res 0 165.0 82.5 247.5 330.0 412.5 10 -1 gate charge, q g , ( c) gate-emitter voltage, v ge , (volts) gate charge vs. v ge 20 0 5 10 15 0 -5 -10 -15 0.825 3.30 2.48 1.65 v ce = 2800v i c = 200a t j = 25c collector current, i c , (amperes) switching energies, e on , e off , e rec , (j/pulse) 2.66 0.33 0.66 1.00 1.33 1.66 2.00 2.33 0 v cc = 2800v v ge = 15v r g(on) = 16.2 r g(off) = 60 l s = 150nh t j = 125c inductive load half-bridge switching energy characteristics (typical) e on e off e rec collector emitter voltage, v ces , (volts) 500 416 333 250 166 83 0 2000 1000 3000 0 collector current, i c , (amperes) reverse bias safe operating area (rbsoa) v cc 3200v v ge = 15v r g(off) = 60 t j = 125c 5000 4000 QID4520002 dual igbt hvigbt module 200 amperes/4500 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 11/14 rev. 3 information presented is based upon manufacturers testing and projected capabilities. this information is subject to change without notice. the manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
6 time, (s) transient thermal impedance characteristics (igbt & fwdi) 1.2 1.0 10 -1 10 -2 10 -3 10 0 10 1 0.8 0.6 0.4 0.2 0 z th = r th ? (normalized value) single pulse t c = 25c per unit base = r th(j-c) = 55 k/kw (igbt) r th(j-c) = 104 k/kw (fwdi) normalized transient thermal impedance, z th(j-c') 500 416 333 250 166 83 0 2000 1000 3000 0 5000 4000 emitter-collector voltage, v ec , (volts) reverse recovery current, i rr , (amperes) free-wheel diode reverse recovery safe operating area (rrsoa) v cc 3200v di/dt < 1000a/s t j = 125c QID4520002 dual igbt hvigbt module 200 amperes/4500 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com preliminary 11/14 rev. 3 information presented is based upon manufacturers testing and projected capabilities. this information is subject to change without notice. the manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
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